[22p-B101-1~16] 15.4 III-V-group nitride crystals

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[22p-B101-8] Investigation of in-plane stress distribution in ELO GaN layer by micro-Raman Spectroscopy

〇Hiroyuki Ogura¹, Kazuma Takeuchi¹, Takeshi Kamikawa¹ (1.Kyocera Corp.)

Keywords:

Raman spectroscopy,Gallium Nitride,Stress distribution