[22p-B201-1~14] 13.7 Compound and power devices, process technology and characterization

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[22p-B201-1] Effects of doped Mg concentrations on the reduction of hole traps in the vicinity of the SiO₂/p-GaN MOS interface

〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:

GaN,MOS,hole trap

There is a problem that a significant of hole traps exist near the valence band at the p-GaN MOS interface, which cause surface Fermi level pinning and thus hole accumulation cannot be observed. On the other hand, we previously reported that hole accumulation can be observed in p-GaN MOS structures with highly Mg-doped substrates. In this study, we report a more detailed investigation of the effect of doped Mg concentration on the reduction of hole traps in the vicinity of the p-GaN MOS interface.