The 84th JSAP Autumn Meeting 2023
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[22p-B201-1~14]13.7 Compound and power devices, process technology and characterization

Fri. Sep 22, 2023 1:45 PM - 5:30 PM JST
Fri. Sep 22, 2023 4:45 AM - 8:30 AM UTC
B201 (Civic Auditorium)
Zenji Yatabe(Kumamoto Univ.), Takuya Maeda(Tokyo Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[22p-B201-1]Effects of doped Mg concentrations on the reduction of hole traps in the vicinity of the SiO2/p-GaN MOS interface

〇Hidetoshi Mizobata1, Mikito Nozaki1, Takuma Kobayashi1, Takayoshi Shimura1, Heiji Watanabe1 (1.Osaka Univ.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22p-B201-2]Theoretical calculation of MgGa-Vo in GaOx interlayer at GaN/SiO2 interface

〇Shuto Hattori1, Atsushi Oshiyama2, Kenji Shiraishi1,2 (1.Graduate School of Eng, Nagoya Univ., 2.IMaSS, Nagoya Univ.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[22p-B201-3]Evaluation of gap-states near conduction band in the vicinity of MOS interface for Mg- and N-ion-co-implanted GaN

〇Yuki Hatakeyama1, Masamichi Akazawa1 (1.RCIQE, Hokkaido Univ.)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[22p-B201-4]Sub-bandgap-light-assisted C–V measurement of MOS structure with photoelectrochemically etched p-GaN

〇Takahide Nukariya1, Jiao Yining1, Umi Takatsu1, Taketomo Sato1, Masamichi Akazawa1 (1.RCIQE, Hokkaido Univ.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[22p-B201-5]MOS characteristics on a GaN crystal face applicable for lightly tapered trench structure

〇Hirohisa Hirai1, Yoshinao Miura1, Akira Nakajima1, Shinsuke Harada1 (1.AIST)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[22p-B201-6]Capacitance-voltage characteristics of AlSiO/n-GaN MOS structures with various ultra-high-pressure annealing times

〇Takumi Hirata1, Masakazu Kanechika2, Tetsu Kachi2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22p-B201-7]Evaluation of Hole Traps in SiO2/p-GaN Structures by Below-gap Light Illumination

〇Kazuki Tomigahara1, Takuma Kobayashi1, Mikito Nozaki1, Takayoshi Shimura1, Heiji Watanabe1 (1.Osaka Univ.)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22p-B201-8]Characterization of mist-Al2O3 gate dielectric and interface characterization of mist-Al2O3/AlGaN/GaN structure

〇Hikaru Hiroshige1, Keigo Bito1, Ren Hashimoto1, Masaki Ishiguro2, Joel Asubar2, Yusui Nakamura1, Zenji Yatabe1 (1.Kumamoto Univ., 2.Univ. of Fukui)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[22p-B201-9]Effects of Residual Stress in SiO2 and Gate Metal for Normally-off AlGaN/GaN MOS-HEMT (TCAD Simulation)

〇Toshiyuki Oishi1, Takuma Nanjo2, Masayuki Furuhashi2, Kazuyasu Nishikawa2 (1.Saga Univ., 2.Mitsubishi Electric)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[22p-B201-10]Low-damage PEC etching on p-GaN surface and its electrochemical characterization (2)

〇Umi Takatsu1, Taketomo Sato1 (1.RCIQE,Hokkaido Univ.)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[22p-B201-11]Photoelectrochemical etching of AlGaN/GaN heterostructures and control of reaction rates

〇Takuya Togashi1, Yugo Oki1, Yoshito Osawa1, Ryota Ochi1, Masamichi Akazawa1, Taketomo Sato1 (1.RCIQE)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[22p-B201-12]Characterization of recess Ohmic contact to AlGaN/GaN heterostructure using single or hybrid electrode structures

〇kazuya Uryu1,2, Yuchen Deng1, Toshi-kazu Suzuki1 (1.JAIST, 2.ATL)
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[22p-B201-13]Investigation of etching damage on GaN surface by using CL and TOF-SIMS

〇Takumi Yonemura1, Kenta Sugawara1 (1.SEI)
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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[22p-B201-14]Effects of nitrogen radical treatment on surface morphology of n-type GaN layers grown by sputtering deposition

〇Shinji Yamada1, Kiho Tanaka1, Manabu Arai1, Tetsu Kachi1, Jun Suda1 (1.Nagoya Univ.)
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