[22p-B201-1~14] 13.7 Compound and power devices, process technology and characterization

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[22p-B201-11] Photoelectrochemical etching of AlGaN/GaN heterostructures and control of reaction rates

〇Takuya Togashi¹, Yugo Oki¹, Yoshito Osawa¹, Ryota Ochi¹, Masamichi Akazawa¹, Taketomo Sato¹ (1.RCIQE)

Keywords:

GaN