[22p-B201-1~14] 13.7 Compound and power devices, process technology and characterization

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[22p-B201-13] Investigation of etching damage on GaN surface by using CL and TOF-SIMS

〇Takumi Yonemura¹, Kenta Sugawara¹ (1.SEI)

Keywords:

gallium nitride,process damage,cathode luminescence

Measurement technique of process damage on GaN surface, such as defects and so on, caused by the etching process is very important, because these damages occur the variation in device properties or deterioration in reliability. However, these damages were not easy to detect because they were only slightly on the very near surface. In this study, we have developed a measurement method that combines cathode-luminescence and Time-of-Flight secondary ion mass spectrometry, to discuss the mechanism of process damage generation on GaN surface.