[22p-B201-1~14] 13.7 Compound and power devices, process technology and characterization

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[22p-B201-5] MOS characteristics on a GaN crystal face applicable for lightly tapered trench structure

〇Hirohisa Hirai¹, Yoshinao Miura¹, Akira Nakajima¹, Shinsuke Harada¹ (1.AIST)

Keywords:

GaN,MOS,Trench

Wet etching of GaN yields smooth crystal faces, which is applicable for GaN trench-MOS technology in next-generation power devices. As for the shape of the trench, from the viewpoint of the device manufacturability, a lightly-tapered structure is more favorable than a perpendicular structure. In this study, we developed an etching process to control the trench shape, and experimentally demonstrated a high quality MOS interface on the trench sidewall.