[22p-B201-1~14] 13.7 Compound and power devices, process technology and characterization

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22p-B201-8] Characterization of mist-Al₂O₃ gate dielectric and interface characterization of mist-Al₂O₃/AlGaN/GaN structure

〇Hikaru Hiroshige¹, Keigo Bito¹, Ren Hashimoto¹, Masaki Ishiguro², Joel Asubar², Yusui Nakamura¹, Zenji Yatabe¹ (1.Kumamoto Univ., 2.Univ. of Fukui)

Keywords:

mist-CVD,Al2O3,AlGaN/GaN

Al₂O₃ gate insulator is one of the most attractive dielectric materials for GaN-based metal-insulator-semiconductor (MIS) devices. In this study, we report on the deposition of amorphous Al₂O₃ thin films by cost-effective mist-CVD method. We initially characterized mist chemical vapor deposited Al₂O₃ thin films on Si substrate. Finally, we have fabricated and characterized AlGaN/GaN MIS capacitor using Al₂O₃ gate insulator deposited by mist-CVD.