[22p-B201-1~14] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[22p-B201-9] Effects of Residual Stress in SiO2 and Gate Metal for Normally-off AlGaN/GaN MOS-HEMT (TCAD Simulation)

〇Toshiyuki Oishi¹, Takuma Nanjo², Masayuki Furuhashi², Kazuyasu Nishikawa² (1.Saga Univ., 2.Mitsubishi Electric)

Keywords:

normally-off GaN HEMT,residual stress,simulation

Effects of Residual Stress in SiO2 and Gate Metal for Normally-off AlGaN/GaN MOS-HEMT is investigated by TCAD Simulation. Drain current vs. gate voltage characteristics are simulated for SiO2 layer and gate metal with residual stress from -2 to 2 GPa. Drain current doesn't flow for HEMTs without the residual stress. When SiO2 layer has negative (compressive) stress, drain current flow keeping normally-off operation.