[22p-P03-1~9] 15.5 Group IV crystals and alloys

[22p-P03-1] Ultra-thin GeSn formation using segregation by Al/epitaxial GeSn(111) structure

〇Taiga Matsumoto¹, Shigehisa Shibayama¹, Akio Ohta², Ryo Yokogawa^3,4, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹ (1.Nagoya Univ., 2.Fukuoka Univ., 3.Meiji Univ., 4.MREL)

Keywords:

segregation,GeSn,Ultra-thin film