Session Details
[22p-P03-1~9]15.5 Group IV crystals and alloys
Fri. Sep 22, 2023 1:30 PM - 3:30 PM JST
Fri. Sep 22, 2023 4:30 AM - 6:30 AM UTC
Fri. Sep 22, 2023 4:30 AM - 6:30 AM UTC
P03 (KJ Hall)
[22p-P03-1]Ultra-thin GeSn formation using segregation by Al/epitaxial GeSn(111) structure
〇Taiga Matsumoto1, Shigehisa Shibayama1, Akio Ohta2, Ryo Yokogawa3,4, Masashi Kurosawa1, Mitsuo Sakashita1, Osamu Nakatsuka1 (1.Nagoya Univ., 2.Fukuoka Univ., 3.Meiji Univ., 4.MREL)
[22p-P03-2]Fabrication of fully suspended microbridges based on Ge-on-SOI
〇Ayaka Odashima1, Takahiro Inoue1, Masaki Nagao1, Kentarou Sawano1 (1.Tokyo City Univ.)
[22p-P03-3]Crack formation in strained SiGe/Ge-on-Si(111) by ultrasonic treatment
〇Yuuka Shibahara1, Rena Kanesawa1, Syuya Kikuoka1, Masaki Nagao1, Michihiro Yamada2,3, Kohei Hamaya2,4,5 (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.JST-PRESTO, 4.OTRI, Osaka Univ., 5.GSES, Osaka Univ.)
[22p-P03-4]Fabrication of Ge(111)-on-Insulator with laser marker and regrowth of strained SiGe
〇Yuichi Sakurai1, Miyu Takamatsu1, Shion Sano1, Rena Kanesawa1, Syuya Kikuoka1, Takahiro Inoue1, Kentaro Sawano1 (1.Tokyo City Univ.)
[22p-P03-5]Fabrication of SiGe/Ge Multiple Quantum Wells on Ge-on-Insulator (100) and Evaluations of Crystallinities and Optical Properties
〇Shion Sano1, Kanesawa Rena1, Sakurai Yuuichi1, Sawano Kentarou1 (1.Tokyo City Univ)
[22p-P03-6]Effect of amorphous GeS on the morphology of crystallized GeS by vapor transport method
〇Qinqiang Zhang1, Ryo Matsumura1, Naoki Fukata1,2 (1.NIMS, 2.Tsukuba Univ.)
[22p-P03-7]Grain size control of polycrystalline GaAs film formed on insulator using Ge seed layer for flexible solar cells
〇Takeshi Nishida1,2, Takashi Suemasu2, Kaoru Toko2 (1.AIST, 2.Univ. of Tsukuba)
[22p-P03-8]Effect of trench width on Ge epitaxial growth on Si
〇Takumi Maeda1, Kota Kato1, Jose A. Piedra-Lorenzana1, Keisuke Yamane1, Ken Hizawa1, Tetsuya Nakai2, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech., 2.SUMCO)
[22p-P03-9]Effect of Ge Epitaxial Interlayer on Solid-Phase Growth of Ge on Si
〇Satoki Furuya1, Kuzutani Mikiya1, Jose A. Piedra-Lorenzana1, Takeshi Hizawa1, Keisuke Yamane1, Hiroyasu Fujiwara2, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech., 2.Hamamatsu photonics)