Presentation Information

[22p-P03-3]Crack formation in strained SiGe/Ge-on-Si(111) by ultrasonic treatment

〇Yuuka Shibahara1, Rena Kanesawa1, Syuya Kikuoka1, Masaki Nagao1, Michihiro Yamada2,3, Kohei Hamaya2,4,5 (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.JST-PRESTO, 4.OTRI, Osaka Univ., 5.GSES, Osaka Univ.)

Keywords:

SiGe,ultrasonic treatment