Presentation Information
[22p-P03-8]Effect of trench width on Ge epitaxial growth on Si
〇Takumi Maeda1, Kota Kato1, Jose A. Piedra-Lorenzana1, Keisuke Yamane1, Ken Hizawa1, Tetsuya Nakai2, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech., 2.SUMCO)
Keywords:
Germanium
Previously, we proposed trench-filling growth of Ge on Si(001) substrates as a method to form a few µm Ge layer in a short time. The trench was formed in the [100] direction, which is inclined at 45 degrees from the [110] direction. In this presentation, we discuss the effect of trench width on the trench-filling growth. In addition, the effect of the arrayed trench is also discussed.