Presentation Information
[22p-P03-9]Effect of Ge Epitaxial Interlayer on Solid-Phase Growth of Ge on Si
〇Satoki Furuya1, Kuzutani Mikiya1, Jose A. Piedra-Lorenzana1, Takeshi Hizawa1, Keisuke Yamane1, Hiroyasu Fujiwara2, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech., 2.Hamamatsu photonics)
Keywords:
Germanium,Solid phase growth
High quality Ge layers with a thickness of several microns are required to achieve high photodetection efficiency at wavelengths around 1.55 µm in a near-infrared Ge photodetector on Si at normal incidence. In order to grow Ge epitaxial layers uniformly on the wafer surface by chemical vapor deposition, the growth rate must be limited to about 10 nm/min. Ge epitaxial layers of several microns in thickness takes a long time to grow. In this study, we investigate a crystallization of amorphous Ge on Si via Ge epitaxial interlayer.