[22p-P07-1~6] 13.3 Insulator technology

[22p-P07-2] Formation energy of ions at vacancy sites in SiN_x and SiO_x films

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

Keywords:

passivation film,humidity resistance,vacancy

In order to analyze the effect of vacancies, which play an important role in the moisture resistance of passivation films, the formation energies of ions at vacancy sites in SiNx and SiOx films were calculated by molecular orbital calculations. It was suggested that the formation energy depends not only on (1) deformation of the network near the vacancies by ions, but also (2) electrostatic interactions between vacancies and ions, and (3) bond formation.