[22p-P07-1~6] 13.3 Insulator technology

[22p-P07-3] Dielectric properties of low-temperature Si oxide films annealed with added NH₃ gas

〇Susumu Horita¹ (1.JAIST)

Keywords:

Si oxide film,low-temperature formation,dielectric property

It is desired that deposited Si oxide films are formed at lower temperature. But, their dielectric property is gotten worse because large amounts of residual OH exist in them. For this problem, using N₂ and NH₃ mixed gas, we annealed 100 and 220 nm Si oxide films deposited at 200 ^oC with silicone oil and O₃ gas, where annealing temperature and time were 250 ^oC and 6 hours, respectively. As a result, their leakage current densities were about 1x10^-8 A/cm² at electric field 3 MV/cm. The values are comparable with that of thermal SiO₂ film.