Presentation Information
[22p-P09-3]Valley current reduction of p-type Si/CaF2 double-barrier Resonant Tunneling Diode using embedded structure in CaF2
〇Ryoya Usami1, Maiko Hoshino1, Kanta Murakami1, Masahiro Watanabe1 (1.Tokyo Tech)
Keywords:
Resonant Tunneling Diode,semiconductor
The Si/CaF2 heterostructure can be epitaxially grown in layers on Si substrates due to their similar crystal structures and lattice constants, and previous studies have demonstrated the room temperature operation of Resonant Tunnel Diodes (RTD) using this structure. In this study has attempted to reduce the valley current in a p-type Si/CaF2 double-barrier RTD using embedded structure in CaF2, in which leakage current was reduced, by increasing the growth temperature of sidewall CaF2 to 650°C and improving the crystal quality at the interface.