Session Details
[22p-P09-1~5]13.6 Nanostructures, quantum phenomena, and nano quantum devices
Fri. Sep 22, 2023 4:00 PM - 6:00 PM JST
Fri. Sep 22, 2023 7:00 AM - 9:00 AM UTC
Fri. Sep 22, 2023 7:00 AM - 9:00 AM UTC
P09 (KJ Hall)
[22p-P09-1]Temperature Dependence of InAs/GaAsSb Superlattice, a Lattice-Matched System Sample Fabricated by MOVPE Method.
〇Daisuke Osaji1, Masakazu Arai1, Takeshi Fujisawa2, Koji Maeda1 (1.Miyazaki Univ., 2.Hokkaido Univ.)
[22p-P09-2]Improvement of current density of Si/CaF2 n-type triple-barrier Resonant Tunneling Diode
〇(M1)Kanta Murakami1, Ryouya Usami1, Maiko Hoshino1, Masahiro Watanabe1 (1.Tokyo Inst. of Tech.)
[22p-P09-3]Valley current reduction of p-type Si/CaF2 double-barrier Resonant Tunneling Diode using embedded structure in CaF2
〇Ryoya Usami1, Maiko Hoshino1, Kanta Murakami1, Masahiro Watanabe1 (1.Tokyo Tech)
[22p-P09-4]First-principles calculation of bulk photovoltaic effect in ferroelectric topological insulator phase of halide perovskite
〇YedijaYusua Sibuea Teweng1, Naoya Yamaguchi2, Fumiyuki Ishii2 (1.Grad.Sch.of Sci.Tech, 2.NanoMaRi)
[22p-P09-5]First-principles study of anomalous valley Hall effect in WTe2/CrI3 van der Waals heterostructures
〇(M2)Syifa FauziaHariyanti Putri1, Naoya Yamuguchi2, Fumiyuki Ishii2 (1.Grad. Sch. Of Sci. & Tech., 2.NanoMari)