[23a-A303-1~11] 13.3 Insulator technology

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[23a-A303-10] Effect of the Interfacial Oxide Film on Breakdown Occurrence in LPCVD SiN film (I)

〇HISATSUGU KURITA¹, Masataka Nakamura¹, Hayato Miyagawa², Yoshiaki Kamigaki³ (1.ROHM Hamamatsu, 2.Kagawa Univ., 3.E&B Research Lab.)

Keywords:

SiN film,dielectric breakdown,capacitor

We identified the dielectric breakdown occurrence of SiN film capacitor which depends on the N₂ annealing temperature. The behavior at around 900 °C seems to be caused by the generation of Si dangling bonds with one oxygen and two silicon back-bonds at the interface SiN film/Si (poly-Si). And the behavior above 1000 ℃ can be attributed to the generation of Si dangling bonds with three oxygen atoms (i.e., E′ centers) at the interface. In this study, we investigated the effect of the interfacial oxide film on the breakdown in SiN film capacitors, which was found to be strongly dependent to thickness of the oxide film.