[23a-A303-1~11] 13.3 Insulator technology

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[23a-A303-11] Effect of the Interfacial Oxide Film on Breakdown Occurrence in LPCVD SiN film (II)

〇Hayato Miyagawa¹, Kosuke Bunya¹, Hisatsugu Kurita², Masataka Nakamura², Yoshiaki Kamigaki³ (1.Kagawa Univ., 2.ROHM Hamamatsu, 3.E&B Research Lab.)

Keywords:

SiN,ESR,dielectric breakdown

We investigated the densities and the distribution of Si bonding defects which can be the factor of the dielectric breakdown in SiN films grown by LP-CVD, where the samples were grown after the formation of thermal oxide layer on the Si substrate. From Electron Spin Resonance measurements for SiN samples with different thickness of oxide layer, we obtained several information of defects, e.g. E’ center does not show the monotonical increase with increasing oxide layer thickness.