[23a-A303-1~11] 13.3 Insulator technology

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-A303-3] Statistical Measurement of Trap Characteristics of High Capacitance Density Trench Capacitor Using Current Measurement Platform

〇(M2)Tatsuhiko Suzuki¹, Koga Saito¹, Hidemi Mitsuda¹, Takezo Mawaki^1,2, Shigetoshi Sugawa², Rihito Kuroda^1,2 (1.Tohoku Univ., 2.NICHe Tohoku Univ.)

Keywords:

semiconductor,trench capacitor,trap characteristics

The trap characteristics of SiO₂ trench capacitors were statistically measured using a current measurement platform that realizes high speed, high precision, and statistical measurement of current characteristics of arbitrary capacitors. We report the statistical measurement method and results of the trap characteristics of SiO₂ trench capacitors by using Discharge Current Transient Spectroscopy to measure the transient response of the capacitor discharge current on a large scale.