[23a-A303-1~11] 13.3 Insulator technology

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-A303-7] Comprehensive Analysis of Hole Trapping in a SiN Film with a Wide Range of Time Constants

〇Harumi Seki¹, Reika Ichihara¹, Yasushi Nakasaki¹, Masumi Saitoh¹, Masamichi Suzuki¹ (1.Kioxia)

Keywords:

silicon nitride,hole trap

Deep understanding of charge trapping and de-trapping characteristics in SiN is essential to know the determinant factors of reliability in MONOS based charge-trap memory devices. In this study, we directly observed hole trapping and de-trapping in wide time range including short time domain such as 10us. It is clarified that there exist two types of hole traps with different trapping/de-trapping speed and spatial position.