Presentation Information

[23a-A602-1]Improvement of carrier mobility of Sn-doped polycrystalline Ge thin films(≤20nm) by post annealing and thinning

〇Taishiro Koga1, Takaya Nagano1, Kenta Moto2, Keisuke Yamamoto2, Taizoh Sadoh1 (1.ISEE Kyushu Univ., 2.IGSES, Kyushu Univ.)

Keywords:

semiconductor