The 84th JSAP Autumn Meeting 2023
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Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[23a-A602-1~9]15.5 Group IV crystals and alloys

Sat. Sep 23, 2023 9:00 AM - 11:15 AM JST
Sat. Sep 23, 2023 12:00 AM - 2:15 AM UTC
A602 (KJ Hall)
Keisuke Arimoto(Univ. of Yamanashi)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[23a-A602-1]Improvement of carrier mobility of Sn-doped polycrystalline Ge thin films(≤20nm) by post annealing and thinning

〇Taishiro Koga1, Takaya Nagano1, Kenta Moto2, Keisuke Yamamoto2, Taizoh Sadoh1 (1.ISEE Kyushu Univ., 2.IGSES, Kyushu Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[23a-A602-2]Effect of Sn-doping on Solid-Phase Crystallization of Si Thin-Films on Insulator

〇Yuki Hanafusa1, Kota Okamoto1, Taizoh Sadoh1 (1.Kyushu Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-A602-3]Hydrogen passivation effects on polycrystalline Ge thin films

〇Koki Nozawa1, Takamitsu Ishiyama1, Takuto Mizoguchi1, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of. Tsukuba)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[23a-A602-4]Crystallization of n-type Si0.1Ge0.9 thin films by high-speed CW laser annealing

〇Rahmat Hadi Saputro1,2, Ryo Matsumura1, Tatsuro Maeda3, Naoki Fukata1,2 (1.NIMS, 2.Univ. of Tsukuba, 3.AIST)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[23a-A602-5]Evaluation of Mg-induced lateral crystallization of amorphous Ge by two-step annealing

〇(B)Ayato Takazaiku1, Towa Hirai1, Atsuki Morimoto1, Kenichiro Takakura1, Isao Tsunoda1 (1.NIT, Kumamoto College)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-A602-6]Electroluminescence Characterization of PIN Diodes Made of GeSn Wires Fabricated by Local Liquid-phase Crystallization

〇(M1)Sosuke Iwamoto1, Takuji Hosoi2, Takuma Kobayashi1, Takayoshi Shimura1, Heiji Watanabe1 (1.Osaka Univ., 2.Kwansei Gakuin Univ.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[23a-A602-7]Epitaxial growth of Ge0.75Sn0.25 layers on InP substrates using sputtering method

〇Taichi Kabeya1, Shigehisa Shibayama1, Komei Takagi1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[23a-A602-8]Ge-lattice-matched SixGe1-x-ySny ternary alloys and their layer transfer

〇Tatsuro Maeda1, Hiroyuki Ishii1, Wen-Hsin Chang1, Shiyu Zhang2, Shigehisa Shibayama2, Masashi Kurosawa2, Osamu Nakatsuka2 (1.AIST, 2.Nagoya University)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[23a-A602-9][Young Scientist Presentation Award Speech] Electron concentration dependence of large thermoelectric power in Si1−xSnx films

〇Tatsuki Oiwa1, Shigehisa Shibayama1, Mitsuo Sakashita1, Osamu Nakatsuka1,2, Takayoshi Katase3, Masashi Kurosawa1 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.MDX ES, Tokyo Tech.)
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