[23a-A602-1~9] 15.5 Group IV crystals and alloys

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[23a-A602-4] Crystallization of n-type Si_0.1Ge_0.9 thin films by high-speed CW laser annealing

〇Rahmat Hadi Saputro^1,2, Ryo Matsumura¹, Tatsuro Maeda³, Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba, 3.AIST)

Keywords:

Germanium,Strain,Photoluminescence

In the recent years, Ge-based semiconducting materials has gained attentions due to its superior properties than the conventional Si-based materials. Moreover, the realization of tensile strain and n-type doping of Ge is a significant approach toward achieving optoelectronic devices based on group IV materials. Our group have developed a high-speed continuous-wave laser annealing (CWLA) for non-equilibrium growth of GeSn, SiGe, and n-type Ge thin films on insulator. This technique was found to enable quasi-direct bandgap transition on Ge by combining tensile-strain and n-doping. Here, we reported the crystallization of Sb-doped n-type Si_0.1Ge_0.9 thin films by our high-speed continuous wave laser annealing process and its potential applications.