講演情報
[23a-A602-4]Crystallization of n-type Si0.1Ge0.9 thin films by high-speed CW laser annealing
〇Rahmat Hadi Saputro1,2, Ryo Matsumura1, Tatsuro Maeda3, Naoki Fukata1,2 (1.NIMS, 2.Univ. of Tsukuba, 3.AIST)
キーワード：
Germanium、Strain、Photoluminescence
In the recent years, Ge-based semiconducting materials has gained attentions due to its superior properties than the conventional Si-based materials. Moreover, the realization of tensile strain and n-type doping of Ge is a significant approach toward achieving optoelectronic devices based on group IV materials. Our group have developed a high-speed continuous-wave laser annealing (CWLA) for non-equilibrium growth of GeSn, SiGe, and n-type Ge thin films on insulator. This technique was found to enable quasi-direct bandgap transition on Ge by combining tensile-strain and n-doping. Here, we reported the crystallization of Sb-doped n-type Si0.1Ge0.9 thin films by our high-speed continuous wave laser annealing process and its potential applications.