[23a-A602-1~9] 15.5 Group IV crystals and alloys

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[23a-A602-7] Epitaxial growth of Ge_0.75Sn_0.25 layers on InP substrates using sputtering method

〇Taichi Kabeya¹, Shigehisa Shibayama¹, Komei Takagi¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:

GeSn,InP,Sputtering method