[23a-B201-1~11] 13.7 Compound and power devices, process technology and characterization

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[23a-B201-1] DC Characteristics of GaN-Channel HEMTs with Highly Si-doped InAs/GaAs Regrown Source/Drain Region

〇Takuya Hoshi¹, Yuki Yoshiya¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT Device Technology Labs.)

Keywords:

GaN HEMT,Regrown InAs/GaAs,MOCVD