The 84th JSAP Autumn Meeting 2023
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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[23a-B201-1~11]13.7 Compound and power devices, process technology and characterization

Sat. Sep 23, 2023 9:00 AM - 12:00 PM JST
Sat. Sep 23, 2023 12:00 AM - 3:00 AM UTC
B201 (Civic Auditorium)
Kozo Makiyama(Sumitomo Electric Industries, Ltd.)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[23a-B201-1]DC Characteristics of GaN-Channel HEMTs with Highly Si-doped InAs/GaAs Regrown Source/Drain Region

〇Takuya Hoshi1, Yuki Yoshiya1, Hiroki Sugiyama1, Fumito Nakajima1 (1.NTT Device Technology Labs.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-B201-2]Fabrication of the GaN source side PSJ FET with built in freewheel diode

〇(M2)Eito Kokubo4, Hirotaka Watanabe1, Atsushi Tanaka1, Manato Deki2, Shugo Nitta1, Yoshio Honda1,2,3, Hiroshi Amano1,2,3 (1.IMaSS Nagoya Univ., 2.D center Nagoya Univ., 3.IAR Nagoya Univ., 4.Nagoya Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[23a-B201-3]Demonstration of 400V/10A switching operation in EID AlGaN/GaN MOS-HEMT

〇Takuma Nanjo1, Shotaro Yamamoto1, Tomohiro Shinagawa1, Masayuki Furuhashi1, Kazuyasu Nishikawa1, Takashi Egawa2 (1.Advanced Technology R&D Center, Mitsubishi Electric Corp., 2.Nagoya Inst. of Tech)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-B201-4]Device characteristics of AlGaInN/GaN HEMTs with a thin UID-GaN channel fabricated on single-crystal AlN substrate

〇Tomoyuki Kawaide1, Yoshinobu Kometani1, Sakura Tanaka1, Takashi Egawa1, Makoto Miyoshi1 (1.Nagoya Inst. Tech.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[23a-B201-5]AlN-based polarization doped FETs with graded AlxGa1-xN (x: 0.77 → 1) channel layer

〇Masanobu Hiroki1, Kazuhide Kumakura1, Yoshitaka Taniyasu1 (1.NTT BRL)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[23a-B201-6]GaN HEMT using High-k films with thickness distribution between GD to improve

〇Yoshikaze Ito1, Yasuyuki Miyamoto1 (1.Tokyo tech.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[23a-B201-7]Reduction of buffer leakage current and improvement of 3-terminal characteristics of N-polar GaN HEMTs

〇Akihiro Hayasaka1, Shigeki Yoshida1, Takahide Hirasaki1, Isao Makabe1, Masaya Okada1, Yukihiro Tsuji1, Kozo Makiyama1, Ken Nakata1 (1.Sumitomo Electric Industries, Ltd.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-B201-8]Simulation and modelling of 2DEG density in ScAlN/GaN and AlGaN/GaN

〇Yusuke Wakamoto1, Atsushi Kobayashi2, Yoshiaki Nakano1, Takuya Maeda1 (1.UTokyo, 2.Tokyo University of Science)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-B201-9]Fabrication of GaN/3C-SiC on-polycrystalline diamond HEMTs heterostructure for efficient thermal management of power devices

〇(M1)Chiharu Moriyama1, Kawamura Keisuke2, Ouchi Sumito2, Hiroki Uratani2, Ohno Yutaka3, Inoue Koji3, Yasuyoshi Nagai3, Naoteru Shigekawa1, Jianbo Liang1 (1.Osaka Metropolitan Univ., 2.Air Water inc., 3.IMR Tohoku Univ.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[23a-B201-10]Low Thermal Resistance of GaN Devices with Bi-layer High Thermal Conductive Carbon Composite

〇Kenji Oosaki1, Yoichi Tsuchiya1, Hiroto Saito1, Atsushi Tanaka2, Tadamoto Suga3, Nora Martinez3, Katsuhiro Chikuba4, Akio Wakejima1 (1.Nagoya Institute of Technology, 2.Nagoya University, 3.Meisei University, 4.Thermo Graphitics CO., LTD.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[23a-B201-11]1-inch-Size GaN-on-Diamond HEMT Device Prepared by surface activated bonding

〇(D)Yusuke Shirayanagi1,2, Shingo Tomohisa1, Keiji Kasamura2, Hiroki Toyoda2, Takashi Matsumae3, Yuichi Kurashima3, Hideki Takagi3, Akihisa Kubota2, Takashi Takenaga1 (1.Mitsubishi Electric, 2.Kumamoto Univ., 3.AIST)
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