Presentation Information
[23a-B201-11]1-inch-Size GaN-on-Diamond HEMT Device Prepared by surface activated bonding
〇(D)Yusuke Shirayanagi1,2, Shingo Tomohisa1, Keiji Kasamura2, Hiroki Toyoda2, Takashi Matsumae3, Yuichi Kurashima3, Hideki Takagi3, Akihisa Kubota2, Takashi Takenaga1 (1.Mitsubishi Electric, 2.Kumamoto Univ., 3.AIST)
Keywords:
High frequency device,Gallium nitride,Diamond device
Gallium nitride (GaN) based high electron mobility transistors (GaN-HEMTs) are widely used as power amplifying device for high power and high frequency application.
Since GaN-HEMTs generate much heat during the operation, so-called “hot-spot” could be generated at the active region in the transistors, which derives deterioration in the performance.
1-inch-size GoD HEMTs have been successfully fabricated using room-temperature surface activated bonding for large-area fabrication of diamond substrates, which can contribute to reduction in diamond device cost.
In this presentation, details of device fabrication steps and characterization results of those devices are reported.
Since GaN-HEMTs generate much heat during the operation, so-called “hot-spot” could be generated at the active region in the transistors, which derives deterioration in the performance.
1-inch-size GoD HEMTs have been successfully fabricated using room-temperature surface activated bonding for large-area fabrication of diamond substrates, which can contribute to reduction in diamond device cost.
In this presentation, details of device fabrication steps and characterization results of those devices are reported.