[23a-B201-1~11] 13.7 Compound and power devices, process technology and characterization

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[23a-B201-5] AlN-based polarization doped FETs with graded Al_xGa_1-xN (x: 0.77 → 1) channel layer

〇Masanobu Hiroki¹, Kazuhide Kumakura¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

Keywords:

AlN,AlGaN

We have reported the formation of 3-dimensional electron slab in upward graded AlGaN channel PolFET structure by using downward graded AlGaN underlying layer. In this presentation, we reprot the dc characteristics of the PolFET. Maximum drain current was 70 mA/mm, which is 100 times larger than that of AlN MESFETs. Off-state leakage current is as low as 4x10^-10 A/mm. As the results, large on/off ratio over 10⁸ was obtained.