[23a-B201-1~11] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-B201-9] Fabrication of GaN/3C-SiC on-polycrystalline diamond HEMTs heterostructure for efficient thermal management of power devices

〇(M1)Chiharu Moriyama¹, Kawamura Keisuke², Ouchi Sumito², Hiroki Uratani², Ohno Yutaka³, Inoue Koji³, Yasuyoshi Nagai³, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ., 2.Air Water inc., 3.IMR Tohoku Univ.)

Keywords:

GaN-HEMTs,diamond,surface activated bonding

With the goal of practical application of on-diamond structures to improve the heat dissipation of GaN HEMTs, we have fabricated GaN/3C-SiC on-polycrystalline diamond HEMTs structures by using surface-activated bonding method. As a result, GaN HEMTs on the diamond structure was successfully fabricated by transferring AlGaN/GaN/3C-SiC layers onto a 10 mm square polycrystalline diamond substrate.