[23a-B205-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[23a-B205-10] Growth of CdSe on topological insulator Bi₂Se₃ by MBE

〇Ryuya Kotabe¹, Tomohiro Kondo¹, Terai Yoshikazu¹ (1.Kyushu Inst. of Tech.)

Keywords:

topological insulator,Bi2Se3,CdSe

In the topological insulator Bi₂Se₃, the interior of the material is an insulator, while the surface exhibits a gapless, high-mobility, spin-polarized topological electronic state. However, in single crystals, the topological electronic states are affected by surface oxidation. Our ultimate goal is to fabricate superlattices with alternating layers of Bi₂Se₃ and insulators. In this study, we selected CdSe as the insulator layer and examined the growth temperature dependence of the CdSe layer.