The 84th JSAP Autumn Meeting 2023
Advanced Search

Session Details

Oral presentation13 Semiconductors : 13.2 Exploratory Materials, Physical Properties, Devices

[23a-B205-1~11]13.2 Exploratory Materials, Physical Properties, Devices

Sat. Sep 23, 2023 9:00 AM - 12:00 PM JST
Sat. Sep 23, 2023 12:00 AM - 3:00 AM UTC
B205 (Civic Auditorium)
Haruhiko Udono(Ibaraki Univ.), Kenji Yamaguchi(QST), Tetsuji Kume(Gifu University)
PDF DownloadDownload PDF
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[23a-B205-1]Demonstration of inert interfaces in BaSi2 double heterojunctions

〇Kosuke Hara1, Keisuke Arimoto1 (1.Univ. of Yamanashi)
PDF DownloadDownload PDF
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[23a-B205-2]BaSI2 heterojunction solar cells using NiO hole transport layers

〇Haruki Takenaka1, Rui Du1, Takumi Sato1, Kimimaru Kajihara1, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Tsukuba Univ., 2.Tosoh Corporation)
PDF DownloadDownload PDF
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[23a-B205-3]Fabrication of Zn1–xGexOy interlayers and application to p-BaSi2 solar cells

〇Kaori Takayanagi1, Sho Aonuki1, Ai Iwai1, Kaoru Toko1, Takashi Suemasu1 (1.Tsukuba Univ.)
PDF DownloadDownload PDF
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[23a-B205-4]Controlling conductivity type of B-ion-implanted p-BaSi2 films prepared by sputtering

〇Takumi Sato1, Takenaka Haruki1, Rui Du1, Kimimaru Kajihara1, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Tsukuba Univ., 2.Tosoh Corporation)
PDF DownloadDownload PDF
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[23a-B205-5]Relationship between post-annealing conditions and property changes in BaSi2 films

〇Ai Iwai1, Sho Aonuki1, Kaori Takayanagi1, Kaoru Toko1, Takasi Suemasu1 (1.Tsukuba Univ.)
PDF DownloadDownload PDF
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[23a-B205-6]Physical properties evaluations of SrSi2

〇Motoharu Imai1, Babak Alinejad2, Haruhiko Udono2 (1.NIMS, 2.Ibaraki Univ.)
PDF DownloadDownload PDF
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[23a-B205-7]First-principles calculations of conductivity control of AgBa2Si3 for thermoelectric applications

〇Kimimaru Kajihara1, Takamitsu Ishiyama1, Sho Aonuki1, Kaoru Toko1, Yoichiro Koda2, Masami Mesuda2, Shuta Honda3, Takashi Suemasu1 (1.Univ. of Tsukuba, 2.Tosoh Corporation, 3.Kansai Univ.)
PDF DownloadDownload PDF
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-B205-8]Room-temperature anisotropic conductivity dynamics in photoexcited silicon

〇(M2)Ami Shirai1, Yuta Murotani1, Tomohiro Fujimoto1, Natsuki Kanda1,2, Ryusuke Matsunaga1 (1.ISSP, The Univ. of Tokyo, 2.RAP, RIKEN)
PDF DownloadDownload PDF
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-B205-9]Nonradiative Recombination of Deep Levels in Si Formed by Electron Irradiation and Subsequent Annealing

〇Yuto Haraguchi1, Tatsuhiko Yatabe1, Tetsuo Ikari1, Atsuhiko Fukuyama1, Shun Sasaki2, Shuichi Samata2, Norichika Mitsugi2 (1.Univ. of Miyazaki, 2.SUMCO Corporation)
PDF DownloadDownload PDF
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[23a-B205-10]Growth of CdSe on topological insulator Bi2Se3 by MBE

〇Ryuya Kotabe1, Tomohiro Kondo1, Terai Yoshikazu1 (1.Kyushu Inst. of Tech.)
PDF DownloadDownload PDF
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[23a-B205-11]Preparation of MnSi1.75-x thin films on Si substrate by sputter deposition method

〇Hiroto Kubota1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)
PDF DownloadDownload PDF
Back to Category List