[23a-B205-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-B205-9] Nonradiative Recombination of Deep Levels in Si Formed by Electron Irradiation and Subsequent Annealing

〇Yuto Haraguchi¹, Tatsuhiko Yatabe¹, Tetsuo Ikari¹, Atsuhiko Fukuyama¹, Shun Sasaki², Shuichi Samata², Norichika Mitsugi² (1.Univ. of Miyazaki, 2.SUMCO Corporation)

Keywords:

deep level,Si power device

In the fabrication of some power devices, Si substrates are subjected to electron irradiation and subsequent annealing. In this study, piezoelectric photothermal spectroscopy and deep level transient spectroscopy were used to evaluate deep levels. The results suggest that the electron traps generated by the annealing at 400°C act as recombination center.