[23p-A202-1~11] 17.3 Layered materials

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-A202-10] Local CV characteristics measurement of mechanically exfoliated single layer MoS₂ using scanning nonlinear dielectric microscopy

〇(M1)Taiyo Ishizuka^1,2, Kohei Yamasue² (1.Tohoku Univ., 2.RIEC, Tohoku Univ.)

Keywords:

layered semiconductor,Scanning Nonlinear Dielectric Microscopy,local CV characteristics measurement

Local CV characteristics measurement by time-resolved SNDM, an extension of scanning nonlinear dielectric microscopy (SNDM), were applied to an atomic layer semiconductor, molybdenum disulfide (MoS₂). The local CV characteristics of single-layer and multi-layer MoS₂ were measured and compared, and it was confirmed that the local CV characteristics of single-layer MoS₂ shifted in the negative voltage direction and the capacitance change was small. The above results indicate that there is a possibility to evaluate microscopic properties of atomic layer semiconductors by measuring local CV characteristics using SNDM.