Session Details
[23p-A202-1~11]17.3 Layered materials
Sat. Sep 23, 2023 1:30 PM - 4:30 PM JST
Sat. Sep 23, 2023 4:30 AM - 7:30 AM UTC
Sat. Sep 23, 2023 4:30 AM - 7:30 AM UTC
A202 (KJ Hall)
Hideki Matsuoka(RIKEN)
[23p-A202-1]Observation of in-plane 90° domain of ferroelectric SnS thin film by POM
〇Satsuki Kitamura1, Ryo Nanae1, Tomonori Nishimura1, Kaito Kanahashi1, Kosuke Nagashio1 (1.UTokyo)
[23p-A202-2]Confirmation of 90°-rotation ferroelectric domain in SnS by BPVE separated from Schottky junction
〇Ryo Nanae1, Satsuki Kitamura1, Yih Ren Chang2, Kaito Kanahashi1, Tomonori Nishimura1, Kosuke Nagashio1 (1.UTokyo, 2.RIKEN)
[23p-A202-3]Electrical characteristics of α-phase Indium selenide by stack structure
〇Sho Ozaki1, Noriyuki Urakami1,2, Yoshio Hashimoto1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)
[23p-A202-4]Electronic properties of single layer and multilayer MXenes
〇Satoshi Yamashita1, Yuki Matsunaga1,2, Ryo Ohshima1, Jun Hirotani1,3, Yuichiro Ando1,3, Masashi Shiraishi1 (1.Kyoto Univ., 2.Nagoya Univ., 3.PRESTO JST)
[23p-A202-5]Optical response of 2D NbOI2
〇Arata Mitsuzuka1, Isamu Yasuda1, Masashi Kawaguchi1, Satoru Morito2, Keiji Ueno2, Masamitsu Hayashi1 (1.The Univ. of Tokyo, 2.Saitama Univ.)
[23p-A202-6]Electric double layer doping in the van der Waals heterostructures
〇Rei Usami1, Takahiko Endo2, Yasumitsu Miyata2, Jiang Pu3, Taishi Takenobu1 (1.Nagoya Univ., 2.Tokyo Metropolitan Univ., 3.Tokyo Tech.)
[23p-A202-7]Influence of excitation wavelengthon degree of circular polarization of luminescence in thin layer InSe
〇(M2)Kazuya Tsuruta1, Jun Ishihara2, Kensuke Miyajima1 (1.Tokyo Univ. Sci., 2.Tohoku Univ.)
[23p-A202-8]Photoliminescence dynamics of suspended TMDC monolayer
〇(M1)Yuto Murakami1, Keishi Akada1, Samuel Jeong1, Yusuke Arashida1, Hiroyuki Mogi1, Shoji Yoshida1, Jun-ichi Fujita1 (1.Univ. of Tsukuba)
[23p-A202-9]Fabrication of folded two-layer TMDC structure by molecular process
〇Shotaro Yotsuya1, Mina Maruyama2, Susumu Okada2, Daisuke Kiriya1 (1.Univ. Tokyo, 2.Univ. of Tsukuba)
[23p-A202-10]Local CV characteristics measurement of mechanically exfoliated single layer MoS2 using scanning nonlinear dielectric microscopy
〇(M1)Taiyo Ishizuka1,2, Kohei Yamasue2 (1.Tohoku Univ., 2.RIEC, Tohoku Univ.)
[23p-A202-11]Investigation of carrier properties of rhombohedral boron monosulfide
〇(M2)Norinobu Watanabe1, Keisuke Miyazaki2, Masayuki Toyoda2, Kotaro Takeyasu1, Naohito Tsujii3, Haruki Kusaka1, Akiyasu Yamamoto4, Susumu Saito2, Masashi Miyakawa3, Takashi Taniguchi3, Takashi Aizawa3, Takao Mori3, Masashiro Miyauchi2, Takahiro Kondo1,5 (1.Univ. Tsukuba, 2.Tokyo Tech., 3.NIMS, 4.TAT, 5.AIMR, Tohoku Univ.)