[23p-A202-1~11] 17.3 Layered materials

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[23p-A202-11] Investigation of carrier properties of rhombohedral boron monosulfide

〇(M2)Norinobu Watanabe¹, Keisuke Miyazaki², Masayuki Toyoda², Kotaro Takeyasu¹, Naohito Tsujii³, Haruki Kusaka¹, Akiyasu Yamamoto⁴, Susumu Saito², Masashi Miyakawa³, Takashi Taniguchi³, Takashi Aizawa³, Takao Mori³, Masashiro Miyauchi², Takahiro Kondo^1,5 (1.Univ. Tsukuba, 2.Tokyo Tech., 3.NIMS, 4.TAT, 5.AIMR, Tohoku Univ.)

Keywords:

two-dimensional material,non-metallic material,boron material

Due to their unique properties, two-dimensional materials are used in a wide range of applications such as electronic devices and catalysts. Rhombohedral boron monosulfide (r-BS) has recently attracted much attention because of its unique layered structure, similar to transition metal dichalcogenides, and layer-dependent band gap. However, experimental evidence that reveals the type of charge carrier in r-BS has not been investigated. In this study, r-BS was synthesized and its type of charge carrier as a semiconductor was evaluated by measuring Seebeck coefficient and photo-electrochemical responses. In both measurements, properties of p-type semiconductors were observed, indicating that the synthesized r-BS is a p-type semiconductor. These results indicate the potential of r-BS for future applications.