[23p-A307-1~15] 6.3 Oxide electronics

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[23p-A307-4] Preparation of transparent ReRAM using various multicomponent n-type oxide semiconductor thin films and study of resistance change mechanism

〇Kyosuke Kimura¹, Ishida Tatsuya¹, Toshihiro Miyata¹ (1.KIT)

Keywords:

ReRAM,n-type oxide semiconductor