[23p-A307-1~15] 6.3 Oxide electronics

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[23p-A307-5] Effect of the hBN flake boundaries on current induced resistive switching of VO₂/hBN

〇(M1)Yuki Tomita¹, Shu Nakaharai², Yutaka Wakayama², Kenji Watanabe², Takashi Taniguchi², Haobo Li¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.Osaka Univ., 2.NIMS)

Keywords:

VO2,hBN