[23p-A602-1~16] 15.5 Group IV crystals and alloys

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-A602-6] Increasing critical thickness and suppression of crack generation in strained SiGe/Ge multiple quantum wells formed on Ge-on-Si (111)

〇Rena Kanesawa¹, Syuya Kikuoka¹, Yuka Shibahara¹, Youya Wagatsuma¹, Michihiro Yamada^3,4,5, Kohei Hamaya^2,3,5, Kentarou Sawano¹ (1.Tokyo City Univ., 2.GSES, Osaka Univ., 3.CSRN, Osaka Univ., 4.JST-PRESTO, 5.OTRI, Osaka Univ.)

Keywords:

semiconductor,SiGe,MQW