The 84th JSAP Autumn Meeting 2023
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Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[23p-A602-1~16]15.5 Group IV crystals and alloys

Sat. Sep 23, 2023 12:45 PM - 5:00 PM JST
Sat. Sep 23, 2023 3:45 AM - 8:00 AM UTC
A602 (KJ Hall)
Taizoh Sadoh(Kyushu Univ.), Ryo Matsumura(National Institute for Materials Science (NIMS))
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12:45 PM - 1:00 PM JST(3:45 AM - 4:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-A602-1]Evaluation of Band Structure of Single Crystalline Si1-xSnx by PL and XPS

〇Hiroki Ishizaki1, Ryo Yokogawa1,2, Yuta Ito1, Tatsuki Oiwa3, Masashi Kurosawa3, Atsushi Ogura1,2 (1.Meiji Univ., 2.MREL, 3.Grad. Sch. of Eng., Nagoya Univ.)
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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-A602-2]Evaluation of 3-Dimensional Self-Ordered Multilayered SiGe Nanodots
by Photoluminescence and Raman spectroscopy (Ⅱ)

〇Yuta Ito1, Ryo Yokogawa1,2, Wei-Chen Wen3, Yuji Yamamoto3, Takuya Minowa1, Atsushi Ogura1,2 (1.Meiji Univ., 2.MREL, 3.IHP)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-A602-3]Local strain distribution analysis in strained SiGe spintronics devices

〇(M1)Tomoki Onabe1, Zhendong Wu1, Tetsuya Tohei1, Yusuke Hayashi1,2, Kazushi Sumitani3, Yasuhiko Imai3, Shigeru Kimura3, Takahiro Naito1, Kohei Hamaya1,2, Akira Sakai1,2 (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.OTRI-Spin, Osaka Univ., 3.JASRI)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-A602-4]Broad band photodetection of Ge Schottky photodiodes through short-wave infrared transparent conductive oxide electrodes

〇Hiroto Ishii1,2, Wen Hsin Chang2, Hiroyuki Ishii2, Takashi Koida2, Hiroki Fujishiro1, Tatsuro Maeda1,2 (1.TUS, 2.AIST)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[23p-A602-5]Enhancements of light emission from Ge microbridges by Al2O3passivation

〇Takahiro Inoue1, Ayaka Odashima1, Masaki Nagao1, Tomotaka Ito1, Syuu Yoshikawa1, Kentarou Sawano1 (1.Tokyo City Univ.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-A602-6]Increasing critical thickness and suppression of crack generation in strained SiGe/Ge multiple quantum wells formed on Ge-on-Si (111)

〇Rena Kanesawa1, Syuya Kikuoka1, Yuka Shibahara1, Youya Wagatsuma1, Michihiro Yamada3,4,5, Kohei Hamaya2,3,5, Kentarou Sawano1 (1.Tokyo City Univ., 2.GSES, Osaka Univ., 3.CSRN, Osaka Univ., 4.JST-PRESTO, 5.OTRI, Osaka Univ.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)English Presentation

[23p-A602-7]Ge epitaxial layer grown on V-groove patterned Si substrate

〇(D)FAIZ FAIZ MOHD1, Jose A. Piedra-Lorenzana1, Keisuke Yamane1, Takeshi Hizawa1, Tetsuya Nakai2, Yasuhiko Ishikawa1 (1.Toyohashi Uni of Tech, 2.SUMCO)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-A602-8]Fabrication and evaluation of strained SiGe/Ge on patterned Si(111)

〇Masaki Nagao1, Youya Wagatsuma1, Takahiro Inoue1, Odashima Ayaka1, Shibahara Yuka1, Yamada Michihiro2,3, Hamaya Kohei2,4,5, Sawano Kentarou1 (1.Tokyo City Univ, 2.CSRN, Osaka Univ., 3.JST-PRESTO, 4.OTRI, Osaka Univ., 5.GSES, Osaka Univ.)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[23p-A602-9]Evaluation of interface trap density of strained Si/SiGe/Si(110) MOS structures

〇Yuki Aonuma1, Taisuke Fujisawa1, Miki Horiuchi1, Mizuki Kikkawa1, Junji Yamanaka1, Kosuke Hara1, Kiyokazu Nakagawa2, Keisuke Arimoto1 (1.Yamanashi Univ., 2.Tokyo City Univ.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[23p-A602-10]Study on in-situ Sb doping process in fabrication of strained Si/SiGe/Si(110) heterostructures

〇Taketo Kawamura1, Kousuke Hara1, Junji Ymanaka1, Kiyokazu Nakagawa2, Keisuke Arimoto1 (1.Univ. of Yamanashi, 2.Tokyo City Univ.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[23p-A602-11]Channel Direction Dependence of Anisotropic Biaxial Stress in Extremely-Thin-Body GOI p-type MOSFET

〇Ryo Yokogawa1,2, Yuiha Maeda1, Sho Sugawa1, Chia-Tsong Chen3, Kasidit Toprasertpong3, Mitsuru Takenaka3, Shinichi Takagi3, Atsushi Ogura1,2 (1.Meiji Univ., 2.MREL, 3.Univ. of Tokyo)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-A602-12]Channel Width Dependence of Anisotropic Biaxial Stress in Extremely Thin Body (100) SGOI p-MOSFET

〇Yuiha Maeda1, Ryo Yokogawa1,2, Sho Sugawa1, Chen Chia-Tsong3, Toprasertpong Kasidit3, Mitsuru Takenaka3, Shinichi Takagi3, Atsushi Ogura1,2 (1.Meiji Univ., 2.Meiji Renewable Energy Laboratory, 3.Univ. of Tokyo)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[23p-A602-13]Genetic algorithm searching for stable structures and band structure analysis of SiGe alloy

〇Hibiki Bekku1, Yusuke Noda2, Koji Sueoka2 (1.Graduate school of Engineering, Okayama Pref. Univ., 2.Faculty of Computer Science and System Engineering, Okayama Pref. Univ.)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[23p-A602-14]Photoemission Study on Si and Ge Segregation on Al/Si0.2Ge0.8(111) Structures

〇(M2)Taiki Sakai1, Akio Ohta2, Noriyuki Taoka3, Katsunori Makihara1, Yuji Yamamoto4, Seiichi Miyazaki1 (1.Nagoya Univ., 2.Fukuoka Univ., 3.Aichi Inst. of Tech., 4.IHP)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[23p-A602-15]Impact of Wet-chemical H2O2 Pretreatment for Ni-silicide Nano-sheet Formation on SiO2

〇Keisuke Kimura1, Noriyuki Taoka2, Akio Ohta3, Katsunori Makihara1, Seiichi Miyazaki1 (1.Nagoya Univ., 2.Aichi Inst. of Tec., 3.Fukuoka Univ.)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[23p-A602-16]Optimization of growth conditions for germanane thin films with high hole mobility

〇Yumiko Katayama1, Daiki Kobayashi1, Yuhsuke Yasutake1, Susumu Fukatsu1, Kazunori Ueno1 (1.GSAS, UTokyo)
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