Presentation Information
[23p-B201-1]Influences of SiO2/β-Ga2O3 formation processes on oxygen deficiency in near surface region of β-Ga2O3
〇Koki Katagiri1, Takashi Onaya1, Koji Kita1 (1.Univ. of Tokyo)
Keywords:
Ga2O3,XPS,interface
CV measurements of SiO2/β-Ga2O3 MOS capacitors show that PDA at 1000°C for 1 hour in O2 atmosphere produces nearly ideal interface properties. From this result, it is expected that the reduction of oxygen deficiency contributes to the change in MOS properties. To verify this prediction, we focused on the PDA atmosphere and SiO2 deposition method as the interface formation conditions and investigated the change in the amount of oxygen defects in SiO2/β-Ga2O3 as affected by these differences.