The 84th JSAP Autumn Meeting 2023
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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[23p-B201-1~5]13.7 Compound and power devices, process technology and characterization

Sat. Sep 23, 2023 1:30 PM - 2:45 PM JST
Sat. Sep 23, 2023 4:30 AM - 5:45 AM UTC
B201 (Civic Auditorium)
Kozo Makiyama(Sumitomo Electric Industries, Ltd.)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[23p-B201-1]Influences of SiO2/β-Ga2O3 formation processes on oxygen deficiency in near surface region of β-Ga2O3

〇Koki Katagiri1, Takashi Onaya1, Koji Kita1 (1.Univ. of Tokyo)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-B201-2]Temperature dependence of barrier height in Ni/β-Ga2O3 Schottky junction Obtained by the Analysis Based on the Thermionic Emission-Diffusion model

〇AKihira Munakata1, Kohei Sasaki2, Kentaro Ema2, Yoshiaki Nakano1, Takuya Maeda1 (1.Tokyo Univ., 2.Novel Crystal Technology, Inc.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[23p-B201-3]A Study of Vertical Ga2O3 Schottky Barrier Diodes Using Field Plate Termination

〇Yohei Yuda1, Kohei Ebihara1, Takuma Nanjo1, Masayuki Furuhashi1, Tatsuro Watahiki1, Kazuyasu Nishikawa1 (1.Mitsubishi Electric)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-B201-4]AC Stress Long (100h) Measurement of Diamond NO2 p-type doped MOSFET

〇Tomoki Shiratsuchi1, Niloy Chandra Saha1, Toshiyuki Oishi1, Makoto Kasu1 (1.Saga Univ.)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[23p-B201-5]GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowth

RUIFENG XU1, 〇(M2)JIAWEI FAN1, Arai Masakazu2, Miyamoto Yasuyuki1 (1.Tokyo Tech., 2.Miyazaki Univ.)
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