[23p-B201-1~5] 13.7 Compound and power devices, process technology and characterization

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[23p-B201-3] A Study of Vertical Ga₂O₃ Schottky Barrier Diodes Using Field Plate Termination

〇Yohei Yuda¹, Kohei Ebihara¹, Takuma Nanjo¹, Masayuki Furuhashi¹, Tatsuro Watahiki¹, Kazuyasu Nishikawa¹ (1.Mitsubishi Electric)

Keywords:

semiconductor,Ga2O3