Presentation Information
[23p-B205-3]Growth of Ge on β-FeSi2 by Molecular Beam Epitaxy and investigation of their strain
〇Shintaro Ishitobi1, Sohichiro Nagatomo1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)
Keywords:
crystal,germanium,strain
Ge is an indirect transition semiconductor, but becomes direct transition by introducing 2% tensile strain. Tensile strain has been attempted to be introduced in Ge on Si by utilising the difference in thermal expansion coefficients between Si and Ge. However, the tensile strain is as small as 0.3% due to the small difference in thermal expansion coefficient between Ge and Si. In this study, Ge was deposited on β-FeSi2 in order to increase the tensile strain on Ge, and since the difference in coefficient of thermal expansion between Ge/β-FeSi2 is three times larger than that between Ge/Si, it is expected that tensile strain exceeding the reported value of 0.3% can be introduced.