The 84th JSAP Autumn Meeting 2023
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Session Details

Oral presentation13 Semiconductors : 13.2 Exploratory Materials, Physical Properties, Devices

[23p-B205-1~5]13.2 Exploratory Materials, Physical Properties, Devices

Sat. Sep 23, 2023 1:30 PM - 2:45 PM JST
Sat. Sep 23, 2023 4:30 AM - 5:45 AM UTC
B205 (Civic Auditorium)
Kenji Yamaguchi(QST)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardHighlighted Presentation

[23p-B205-1]Formation of SiH from CaSi2 films fabricated by close-spaced evaporation

〇Ryota Takagaki1, Keisuke Arimoto1, Junji Yamanaka1, Masashi Kurosawa2, Kosuke Hara1 (1.Univ. of Yamanashi, 2.Nagoya Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[23p-B205-2]Structural and Optical Characterizations of Nax(AlyGe1-y)136 film

〇Yuma Fukuda2, Tun Naing Aye1, Rahul Kumar1, Himanshu Jha1, Fumitaka Ohashi1, Tetsuji Kume1,2 (1.Gifu Univ., 2.Grad. Sch. of Gifu Univ.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[23p-B205-3]Growth of Ge on β-FeSi2 by Molecular Beam Epitaxy and investigation of their strain

〇Shintaro Ishitobi1, Sohichiro Nagatomo1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[23p-B205-4]Dependence of Si/Fe supply ratio on photo-response in β-FeSi2 pn homojunctions

〇Kota Tanaka1, Hidekazu Kanda1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[23p-B205-5]Improvement of Photovoltaic Characteristics of n-nanocrystalline-β-FeSi2 Embedded in Si Films/p-Si Heterojunction Devices

〇(M1)Kenta Yoshimura1, Takumi Kidokoro1, Hiroshi Katsumata1 (1.Meiji Univ.)
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