[23p-B205-1~5] 13.2 Exploratory Materials, Physical Properties, Devices

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[23p-B205-4] Dependence of Si/Fe supply ratio on photo-response in β-FeSi₂ pn homojunctions

〇Kota Tanaka¹, Hidekazu Kanda¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

Keywords:

semiconductor,dark current,Si/Fe supply ratio

The silicide semiconductor β-FeSi₂ is expected to be a promising photoelectric conversion material in the near-infrared region. We have fabricated β-FeSi₂ pn homojunction devices and succeeded in detecting light in the near-infrared region. We have fabricated devices with a Si/Fe supply ratio of R_Si/R_Fe = 1.17, which achieves the chemically amphoteric composition during growth, and investigated the current-voltage (I-V) and spectral response characteristics. In this device, defects at the pn junction interface are considered to increase the dark current. In this study, we fabricated devices by changing the Si/Fe ratio and verified the Si/Fe supply ratio dependence of the dark current and spectral response.