Session Details
[21p-P20-1~4]3.12 Semiconductor optical devices (formerly 3.13)
Thu. Sep 21, 2023 4:00 PM - 6:00 PM JST
Thu. Sep 21, 2023 7:00 AM - 9:00 AM UTC
Thu. Sep 21, 2023 7:00 AM - 9:00 AM UTC
P20 (KJ Hall)
[21p-P20-1]Frequency Noise Characteristics of Mutually Injection Locked Semiconductor Lasers Coupled with Optical Cavity
〇Nobuhide Yokota1, Hiroshi Yasaka1 (1.Tohoku Univ.)
[21p-P20-2]Improvement of temperature characteristics of 1550nm-band quantum dot lasers by HR coating
〇Ryota Yabuki1, Atsushi Matsumoto2, Koichi Akahane2, Siim Heinsalu1, Yuichi Matsushima1, Hiroshi Ishikawa1, Katsuyuki Utaka1 (1.Waseda Univ., 2.NICT)
[21p-P20-3]Active layer desings for near-infrared wavelength quantum cascade lasers using CaF2/ Si
heterostructure for electric field reduction
〇Yuta Sugiyama1, Hyuma Suzuki1, Zhiyuan Fan1, Masahiro Watanabe1 (1.Tokyo Tech.)
[21p-P20-4]Material selection for electrodes of double heterojunction BaSi2 solar cells
〇Tomoaki Yazaki1, Keisuke Arimoto1, Junji Yamanaka1, Kosuke O. Hara1 (1.CCST, Univ. of Yamanashi)