[22a-12J-1~8] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[22a-12J-1] [JSAP Kenji Natori Award Speech] Before and After My Conception of LDD (Lightly Doped Drain) MOSFET

〇Kazuyuki Saito¹ (1.No)

Keywords:

LDDMOSFET,MOS Integrated Circuits,Ultra-fine CMOS Technologies

I am surprised and very grateful to receive the 1^st award in honor of Prof. Kenji Natori. This research was conducted about half a century ago, in the 2-3um era, when we were aiming for sub-micron LSIs. The proposed LDD (Lightly Doped Drain) MOSFET was designed to reduce the drain electric field, and was proved to suppress the short channel effect. LDD was popularized and developed by Dr. Seiki Ogura’s group of IBM and others, and has been used to prevent the hot-carrier related problems. It is very delightful for me that the concept of LDDFET has been able to be a key technology in the ultrafine CMOS LSIs.