Session Details
[22a-12J-1~8]13.5 Semiconductor devices/ Interconnect/ Integration technologies
Fri. Mar 22, 2024 9:00 AM - 11:45 AM JST
Fri. Mar 22, 2024 12:00 AM - 2:45 AM UTC
Fri. Mar 22, 2024 12:00 AM - 2:45 AM UTC
12J (Building No. 1)
Digh Hisamoto(Hitachi), Takahisa Tanaka(Keio Univ.)
[22a-12J-1][JSAP Kenji Natori Award Speech] Before and After My Conception of LDD (Lightly Doped Drain) MOSFET
〇Kazuyuki Saito1 (1.No)
[22a-12J-2][JSAP Kenji Natori Award Speech] Design of High Mobility Extremely-Thin-Body Nanosheet Channels by Modeling of Nonlinear Perturbation of Surface Roughness Scattering
〇Kei Sumita1 (1.Univ. Tokyo)
[22a-12J-3][The 55th Young Scientist Presentation Award Speech] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3D Integrated Devices
〇Kaito Hikake1, Zhuo Li1, Junxiang Hao1, Chitra Pandy1, Takuya Saraya1, Toshiro Hiramoto1, Takanori Takahashi2, Mutsunori Uenuma2, Yukiharu Uraoka2, Masaharu Kobayashi1,3 (1.IIS, Univ. of Tokyo, 2.NAIST, 3.d.lab, Univ. of Tokyo)
[22a-12J-4]New Steep Subthreshold Slope Device "Gate-Controlled Carrier-Injection SOI Transistor"
〇(M2)Haruki Yonezaki1, Takayuki Mori1, Jiro Ida1 (1.Kanazawa Inst. of Tech.)
[22a-12J-5]Power-gating performance of nonvolatile SRAM using FinFETs for low-voltage operation
〇Yusaku Shiotsu1, Osamu Yamazaki1, Satoshi Sugahara1 (1.FIRST, Tokyo Inst. of Tech.)
[22a-12J-6]Variation tolerance analysis of ultralow-voltage SRAM cells configured with piezoelectronic transistors
〇Yusaku Shiotsu1, Satoshi Sugahara1 (1.FIRST, Tokyo Inst. of Tech.)
[22a-12J-7]An Ultrasonic Water Flow Meter with Multi-Phase Time-Zooming
〇Junpei Oda1, Yuta Kaga1, Koh Johguchi1 (1.Shinshu Univ.)
[22a-12J-8]Experimental Investigation of High Precision Wearable Perspiration Meter System
〇Shunsaku Mineo1, Ayumu Yamamoto1, Shin-Ichiro Kuroki2, Hideya Momose3, Koh Johguchi1 (1.Shinshu Univ., 2.Hiroshima Univ., 3.Skinos Co., Ltd)